NVMFS5832NLT3G Vidiny (USD) [2580pcs Stock]
- 5,000 pcs$0.21484
- Ampahany:
- NVMFS5832NLT3G
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 40V 120A SO8FL.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers Bridge, Transistor - FET, MOSFET - Arrays, Diode - Zener - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistorio - Bipolar (BJT) - Arrays and Diodes - Miova endrika ny habeny (varicaps, varact ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor NVMFS5832NLT3G electronic components. NVMFS5832NLT3G can be shipped within 24 hours after order. If you have any demands for NVMFS5832NLT3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS5832NLT3G Toetran'ny vokatra
Ampahany :
NVMFS5832NLT3G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 40V 120A SO8FL
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
21A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2700pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.7W (Ta), 127W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
5-DFN (5x6) (8-SOFL)
Famonosana / tranga :
8-PowerTDFN
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