Ampahany :
IPB036N12N3GATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 120V 180A TO263-7
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
120V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
180A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.6 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs :
211nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
13800pF @ 60V
Fandroahana herinaratra (Max) :
300W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO263-7
Famonosana / tranga :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB