Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 13.7A DPAK
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
13.7A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 6.9A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1300pF @ 300V
Fandroahana herinaratra (Max) :
130W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
D2PAK
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB