IPB049NE7N3GATMA1 Vidiny (USD) [75047pcs Stock]
- 1 pcs$0.52102
- Ampahany:
- IPB049NE7N3GATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 75V 80A TO263-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Transistors - JFET, Transistors - Bipolar (BJT) - Single, mialoha alik, Tratrao - SCR - Modules, Ny kristianao - SCR, Transistors - IGBTs - tokan-tena and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPB049NE7N3GATMA1 electronic components. IPB049NE7N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB049NE7N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB049NE7N3GATMA1 Toetran'ny vokatra
Ampahany :
IPB049NE7N3GATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 75V 80A TO263-3
Series :
OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
4750pF @ 37.5V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
150W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
D²PAK (TO-263AB)
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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