FCP190N60E Vidiny (USD) [28083pcs Stock]
- 1 pcs$1.33091
- Ampahany:
- FCP190N60E
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 600V TO220-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Diodes - Mpihazakazaka - Iray, Tratrao - TRIACs, Transistors - IGBTs - Modules, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - RF, Diodes - RF and Transistor - FET, MOSFET - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor FCP190N60E electronic components. FCP190N60E can be shipped within 24 hours after order. If you have any demands for FCP190N60E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP190N60E Toetran'ny vokatra
Ampahany :
FCP190N60E
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V TO220-3
Series :
SuperFET® II
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20.6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
3175pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
208W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220-3
Famonosana / tranga :
TO-220-3
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