BSB028N06NN3GXUMA1 Vidiny (USD) [87199pcs Stock]
- 1 pcs$0.44841
- Ampahany:
- BSB028N06NN3GXUMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 60V 22A WDSON-2.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny kristianao - SCR, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFET - RF, Diode - Mpitaovana - Arrays, Transistors - IGBTs - Tafidina, Diode - Zener - Arrays, Transistors - Bipolar (BJT) - Single and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies BSB028N06NN3GXUMA1 electronic components. BSB028N06NN3GXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB028N06NN3GXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB028N06NN3GXUMA1 Toetran'ny vokatra
Ampahany :
BSB028N06NN3GXUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 22A WDSON-2
Series :
OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
22A (Ta), 90A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4V @ 102µA
Gate Charge (Qg) (Max) @ Vgs :
143nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
12000pF @ 30V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.2W (Ta), 78W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
MG-WDSON-2, CanPAK M™
Famonosana / tranga :
3-WDSON
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