[3535pcs Stock]
- Ampahany:
- BUK9E1R6-30E,127
- Manufacturer:
- NXP USA Inc.
- Famaritana antsipirihany:
- MOSFET N-CH 30V 120A I2PAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Ny kristianao - SCR, Diodes - RF, Diode - Zener - Arrays, Diode - Mpitaovana - Arrays, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - RF and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in NXP USA Inc. BUK9E1R6-30E,127 electronic components. BUK9E1R6-30E,127 can be shipped within 24 hours after order. If you have any demands for BUK9E1R6-30E,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK9E1R6-30E,127 Toetran'ny vokatra
Ampahany :
BUK9E1R6-30E,127
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 30V 120A I2PAK
Series :
TrenchMOS™
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
120A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
1.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
113nC @ 5V
Vgs (Max) :
±10V
Fampiasana masinina (Ciss) (Max) @ Vds :
16150pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
349W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
I2PAK
Famonosana / tranga :
TO-262-3 Long Leads, I²Pak, TO-262AA
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