Ampahany :
IPI80P04P4L04AKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH TO262-3
Series :
Automotive, AEC-Q101, OptiMOS™
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
176nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
3800pF @ 25V
Fandroahana herinaratra (Max) :
125W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Package Fitaovana mpamatsy :
PG-TO262-3-1
Famonosana / tranga :
TO-262-3 Long Leads, I²Pak, TO-262AA