Diodes Incorporated - ZXMN2F30FHQTA

KEY Part #: K6393747

ZXMN2F30FHQTA Vidiny (USD) [663036pcs Stock]

  • 1 pcs$0.05579
  • 3,000 pcs$0.05025

Ampahany:
ZXMN2F30FHQTA
Manufacturer:
Diodes Incorporated
Famaritana antsipirihany:
MOSFET N-CH 20V 4.9A SOT23-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Transistors - IGBTs - Tafidina, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF and Ny kristianao - SCR ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN2F30FHQTA Toetran'ny vokatra

Ampahany : ZXMN2F30FHQTA
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 20V 4.9A SOT23-3
Series : Automotive, AEC-Q101
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4.9A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 45 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 4.8nC @ 10V
Vgs (Max) : ±12V
Fampiasana masinina (Ciss) (Max) @ Vds : 452pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 1.4W
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : SOT-23-3
Famonosana / tranga : TO-236-3, SC-59, SOT-23-3