[569pcs Stock]
- Ampahany:
- SI7100DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 8V 35A 1212-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - TRIACs, Ny kristianao - SCR, Transistorio - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Transistors - IGBTs - Tafidina, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - RF and Diodes - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI7100DN-T1-E3 electronic components. SI7100DN-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7100DN-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7100DN-T1-E3 Toetran'ny vokatra
Ampahany :
SI7100DN-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 8V 35A 1212-8
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
8V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
35A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
3.5 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 8V
Vgs (Max) :
±8V
Fampiasana masinina (Ciss) (Max) @ Vds :
3810pF @ 4V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.8W (Ta), 52W (Tc)
Ny mari-pana :
-50°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® 1212-8
Famonosana / tranga :
PowerPAK® 1212-8
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