[1235pcs Stock]
- Ampahany:
- IPB180N06S4H1ATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 60V 180A TO263-7.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny kristianao - SCR, Modules maotera mpamily, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, mialoha alik, Diode - Zener - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPB180N06S4H1ATMA1 electronic components. IPB180N06S4H1ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB180N06S4H1ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB180N06S4H1ATMA1 Toetran'ny vokatra
Ampahany :
IPB180N06S4H1ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 180A TO263-7
Series :
OptiMOS™
Ampahany :
Discontinued at Digi-Key
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
180A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
21900pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
250W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO263-7-3
Famonosana / tranga :
TO-263-7, D²Pak (6 Leads + Tab)
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