Infineon Technologies - IPD06N03LB G

KEY Part #: K6400835

[3260pcs Stock]


    Ampahany:
    IPD06N03LB G
    Manufacturer:
    Infineon Technologies
    Famaritana antsipirihany:
    MOSFET N-CH 30V 50A TO-252.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Diodes - Zener - Iray, Transistors - FETs, MOSFETs - Single, Tratrao - SCR - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - JFET and Tratrao - TRIACs ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Infineon Technologies IPD06N03LB G electronic components. IPD06N03LB G can be shipped within 24 hours after order. If you have any demands for IPD06N03LB G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPD06N03LB G Toetran'ny vokatra

    Ampahany : IPD06N03LB G
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 30V 50A TO-252
    Series : OptiMOS™
    Ampahany : Obsolete
    Type FET : N-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 50A (Tc)
    Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 6.1 mOhm @ 50A, 10V
    Vgs (th) (Max) @ Id : 2V @ 40µA
    Gate Charge (Qg) (Max) @ Vgs : 22nC @ 5V
    Vgs (Max) : ±20V
    Fampiasana masinina (Ciss) (Max) @ Vds : 2800pF @ 15V
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 83W (Tc)
    Ny mari-pana : -55°C ~ 175°C (TJ)
    Type Type : Surface Mount
    Package Fitaovana mpamatsy : PG-TO252-3
    Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63

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