Infineon Technologies - BSC026N02KSGAUMA1

KEY Part #: K6419822

BSC026N02KSGAUMA1 Vidiny (USD) [135517pcs Stock]

  • 1 pcs$0.27293

Ampahany:
BSC026N02KSGAUMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 20V 100A TDSON-8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Zener - Arrays, Transistors - JFET, Diode - Mpitaovana - Arrays, Modules maotera mpamily, Transistors - FETs, MOSFETs - Single, Ny kristianao - SCR, Diodes - Miova endrika ny habeny (varicaps, varact and Transistorio - Bipolar (BJT) - Arrays ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC026N02KSGAUMA1 Toetran'ny vokatra

Ampahany : BSC026N02KSGAUMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 20V 100A TDSON-8
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 25A (Ta), 100A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 50A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 52.7nC @ 4.5V
Vgs (Max) : ±12V
Fampiasana masinina (Ciss) (Max) @ Vds : 7800pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 2.8W (Ta), 78W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TDSON-8
Famonosana / tranga : 8-PowerTDFN

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