TK65E10N1,S1X Vidiny (USD) [35157pcs Stock]
- 1 pcs$1.29125
- 50 pcs$0.98655
- 100 pcs$0.88788
- 500 pcs$0.69056
- 1,000 pcs$0.57217
- Ampahany:
- TK65E10N1,S1X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET N CH 100V 148A TO220.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Tratrao - TRIACs, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single, Transistorio - Bipolar (BJT) - Arrays, Transistors - FET, MOSFET - RF, Tratrao - SCR - Modules and Transistor - FET, MOSFET - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TK65E10N1,S1X electronic components. TK65E10N1,S1X can be shipped within 24 hours after order. If you have any demands for TK65E10N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK65E10N1,S1X Toetran'ny vokatra
Ampahany :
TK65E10N1,S1X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 100V 148A TO220
Series :
U-MOSVIII-H
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
148A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.8 mOhm @ 32.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
81nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
5400pF @ 50V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
192W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220
Famonosana / tranga :
TO-220-3
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