RN1110MFV,L3F Vidiny (USD) [3227101pcs Stock]
- 1 pcs$0.01152
- 8,000 pcs$0.01146
- Ampahany:
- RN1110MFV,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- TRANS PREBIAS NPN 0.15W VESM.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Tratrao - SCR - Modules, Transistor - Tanjona manokana, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage RN1110MFV,L3F electronic components. RN1110MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1110MFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1110MFV,L3F Toetran'ny vokatra
Ampahany :
RN1110MFV,L3F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS PREBIAS NPN 0.15W VESM
Series :
-
Ampahany :
Active
Type Transistor :
NPN - Pre-Biased
Ankehitriny - Collector (Ic) (Max) :
100mA
Volonta - Famoronan'ny mpanangom-bokatra :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
-
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Ankehitriny - Collector Cutoff (Max) :
100nA (ICBO)
Frequency - Tetezamita :
-
Hery - Max :
150mW
Type Type :
Surface Mount
Famonosana / tranga :
SOT-723
Package Fitaovana mpamatsy :
VESM
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