Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS PREBIAS NPN 200MW SMINI
Type Transistor :
NPN - Pre-Biased
Ankehitriny - Collector (Ic) (Max) :
800mA
Volonta - Famoronan'ny mpanangom-bokatra :
50V
Resistor - Base (R1) :
1 kOhms
Resistor - Emitter Base (R2) :
1 kOhms
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce :
60 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 2mA, 50mA
Ankehitriny - Collector Cutoff (Max) :
500nA
Frequency - Tetezamita :
300MHz
Type Type :
Surface Mount
Famonosana / tranga :
TO-236-3, SC-59, SOT-23-3
Package Fitaovana mpamatsy :
S-Mini