Manufacturer :
GeneSiC Semiconductor
Description :
TRANS SJT 650V 4A TO276
teknolojia :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
4A (Tc) (165°C)
Fandefasana fiara (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
415 mOhm @ 4A
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
324pF @ 35V
Fandroahana herinaratra (Max) :
125W (Tc)
Ny mari-pana :
-55°C ~ 225°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-276
Famonosana / tranga :
TO-276AA