Ampahany :
IPB65R099C6ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 38A TO263
Ampahany :
Not For New Designs
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
38A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 12.8A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs :
127nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
2780pF @ 100V
Fandroahana herinaratra (Max) :
278W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
D²PAK (TO-263AB)
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB