SI7962DP-T1-E3 Vidiny (USD) [46382pcs Stock]
- 1 pcs$0.84300
- 3,000 pcs$0.78907
- Ampahany:
- SI7962DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2N-CH 40V 7.1A PPAK SO-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diodes - Rectifiers Bridge, Transistors - IGBTs - tokan-tena, Transistors - FET, MOSFET - RF, Transistors - JFET, Tratrao - SCR - Modules, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Tafidina ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI7962DP-T1-E3 electronic components. SI7962DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7962DP-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7962DP-T1-E3 Toetran'ny vokatra
Ampahany :
SI7962DP-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 40V 7.1A PPAK SO-8
Series :
TrenchFET®
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
7.1A
Rds On (Max) @ Id, Vgs :
17 mOhm @ 11.1A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
1.4W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® SO-8 Dual
Package Fitaovana mpamatsy :
PowerPAK® SO-8 Dual
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