[1042pcs Stock]
- Ampahany:
- IPD16CNE8N G
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 85V 53A TO252-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistor - Unjunction Programmable, Transistors - Bipolar (BJT) - RF, Modules maotera mpamily, Diode - Zener - Arrays, Ny thyristors - DIAC, SIDACs and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPD16CNE8N G electronic components. IPD16CNE8N G can be shipped within 24 hours after order. If you have any demands for IPD16CNE8N G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD16CNE8N G Toetran'ny vokatra
Ampahany :
IPD16CNE8N G
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 85V 53A TO252-3
Series :
OptiMOS™
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
85V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
53A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 53A, 10V
Vgs (th) (Max) @ Id :
4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
3230pF @ 40V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
100W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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