EPC - EPC2007

KEY Part #: K6406612

EPC2007 Vidiny (USD) [1259pcs Stock]

  • 1,000 pcs$0.44013

Ampahany:
EPC2007
Manufacturer:
EPC
Famaritana antsipirihany:
GANFET TRANS 100V 6A BUMPED DIE.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - tokan-tena, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Ny kristianao - SCR, Diodes - Zener - Iray, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Tafidina, Diode - Zener - Arrays and Diode - Mpitaovana - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in EPC EPC2007 electronic components. EPC2007 can be shipped within 24 hours after order. If you have any demands for EPC2007, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2007 Toetran'ny vokatra

Ampahany : EPC2007
Manufacturer : EPC
Description : GANFET TRANS 100V 6A BUMPED DIE
Series : eGaN®
Ampahany : Obsolete
Type FET : N-Channel
teknolojia : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 6A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 6A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs : 2.8nC @ 5V
Vgs (Max) : +6V, -5V
Fampiasana masinina (Ciss) (Max) @ Vds : 205pF @ 50V
Fihetsika FET : -
Fandroahana herinaratra (Max) : -
Ny mari-pana : -40°C ~ 125°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : Die Outline (5-Solder Bar)
Famonosana / tranga : Die
Mety ho liana koa ianao
  • IRFR3410TRRPBF

    Infineon Technologies

    MOSFET N-CH 100V 31A DPAK.

  • IRFR1018ETRRPBF

    Infineon Technologies

    MOSFET N-CH 60V 79A DPAK.

  • IRLR024ZTRPBF

    Infineon Technologies

    MOSFET N-CH 55V 16A DPAK.

  • TK40P04M1(T6RSS-Q)

    Toshiba Semiconductor and Storage

    MOSFET N-CH 40V 40A 3DP 2-7K1A.

  • TP0610K-T1

    Vishay Siliconix

    MOSFET P-CH 60V 185MA SOT23.

  • 2N7002E

    Vishay Siliconix

    MOSFET N-CH 60V 240MA SOT23.