SIHU2N80E-GE3 Vidiny (USD) [53440pcs Stock]
- 1 pcs$0.73167
- Ampahany:
- SIHU2N80E-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 800V 2.8A IPAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - Single, mialoha alik, Tratrao - SCR - Modules, Transistors - IGBTs - Modules, Diodes - Rectifiers Bridge, Diodes - Miova endrika ny habeny (varicaps, varact, Modules maotera mpamily and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIHU2N80E-GE3 electronic components. SIHU2N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU2N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHU2N80E-GE3 Toetran'ny vokatra
Ampahany :
SIHU2N80E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 800V 2.8A IPAK
Series :
E
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
2.8A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.75 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19.6nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
315pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
62.5W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
IPAK (TO-251)
Famonosana / tranga :
TO-251-3 Long Leads, IPak, TO-251AB
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