Infineon Technologies - IPA90R1K0C3XKSA1

KEY Part #: K6400671

IPA90R1K0C3XKSA1 Vidiny (USD) [40310pcs Stock]

  • 1 pcs$0.96999

Ampahany:
IPA90R1K0C3XKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 900V 5.7A TO220-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Transistors - FET, MOSFET - RF, Ny thyristors - DIAC, SIDACs, Diodes - Zener - Iray, Diodes - Miova endrika ny habeny (varicaps, varact, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - IGBTs - Modules and Diode - Mpitaovana - Arrays ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA90R1K0C3XKSA1 Toetran'ny vokatra

Ampahany : IPA90R1K0C3XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 900V 5.7A TO220-3
Series : CoolMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 5.7A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 3.3A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 850pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 32W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220-FP
Famonosana / tranga : TO-220-3 Full Pack