EPC - EPC2012C

KEY Part #: K6417098

EPC2012C Vidiny (USD) [78588pcs Stock]

  • 1 pcs$0.56967
  • 1,000 pcs$0.56684

Ampahany:
EPC2012C
Manufacturer:
EPC
Famaritana antsipirihany:
GANFET TRANS 200V 5A BUMPED DIE.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Diodes - Rectifiers Bridge, Diodes - RF, Diodes - Miova endrika ny habeny (varicaps, varact, Ny kristianao - SCR, Transistorio - Bipolar (BJT) - Arrays, Transistor - FET, MOSFET - Arrays and Transistors - Bipolar (BJT) - Single, mialoha alik ...
Ny tombony azo amin'ny fifaninanana:
We specialize in EPC EPC2012C electronic components. EPC2012C can be shipped within 24 hours after order. If you have any demands for EPC2012C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2012C Toetran'ny vokatra

Ampahany : EPC2012C
Manufacturer : EPC
Description : GANFET TRANS 200V 5A BUMPED DIE
Series : eGaN®
Ampahany : Active
Type FET : N-Channel
teknolojia : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 5A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.3nC @ 5V
Vgs (Max) : +6V, -4V
Fampiasana masinina (Ciss) (Max) @ Vds : 140pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : -
Ny mari-pana : -40°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : Die Outline (4-Solder Bar)
Famonosana / tranga : Die
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