[2595pcs Stock]
- Ampahany:
- IPU80R2K8CEBKMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 800V 1.9A TO251-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Tratrao - SCR - Modules, Diodes - Zener - Iray and Transistor - Tanjona manokana ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPU80R2K8CEBKMA1 electronic components. IPU80R2K8CEBKMA1 can be shipped within 24 hours after order. If you have any demands for IPU80R2K8CEBKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU80R2K8CEBKMA1 Toetran'ny vokatra
Ampahany :
IPU80R2K8CEBKMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 800V 1.9A TO251-3
Series :
CoolMOS™
Ampahany :
Discontinued at Digi-Key
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.9A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.8 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
290pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
42W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
PG-TO251-3
Famonosana / tranga :
TO-251-3 Short Leads, IPak, TO-251AA
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