TK10E60W,S1VX Vidiny (USD) [33399pcs Stock]
- 1 pcs$1.35736
- 50 pcs$1.03480
- 100 pcs$0.94282
- 500 pcs$0.76345
- 1,000 pcs$0.64387
- Ampahany:
- TK10E60W,S1VX
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET N CH 600V 9.7A TO-220.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Tratrao - TRIACs, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Transistors - IGBTs - tokan-tena, Transistors - FETs, MOSFETs - Single and Tratrao - SCR - Modules ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TK10E60W,S1VX electronic components. TK10E60W,S1VX can be shipped within 24 hours after order. If you have any demands for TK10E60W,S1VX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10E60W,S1VX Toetran'ny vokatra
Ampahany :
TK10E60W,S1VX
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 600V 9.7A TO-220
Series :
DTMOSIV
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
9.7A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
700pF @ 300V
Fihetsika FET :
Super Junction
Fandroahana herinaratra (Max) :
100W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220
Famonosana / tranga :
TO-220-3
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