Infineon Technologies - IPS80R1K4P7AKMA1

KEY Part #: K6420481

IPS80R1K4P7AKMA1 Vidiny (USD) [199434pcs Stock]

  • 1 pcs$0.48918
  • 10 pcs$0.43399
  • 100 pcs$0.32455
  • 500 pcs$0.25170
  • 1,000 pcs$0.19871

Ampahany:
IPS80R1K4P7AKMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 800V 4A IPAK-SL.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny kristianao - SCR, Transistor - FET, MOSFET - Arrays, Transistor - Tanjona manokana, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - Single, mialoha alik, Ny thyristors - DIAC, SIDACs and Diode - Mpitaovana - Arrays ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPS80R1K4P7AKMA1 Toetran'ny vokatra

Ampahany : IPS80R1K4P7AKMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 800V 4A IPAK-SL
Series : CoolMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 1.4A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : -
Fihetsika FET : Super Junction
Fandroahana herinaratra (Max) : 32W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO251-3
Famonosana / tranga : TO-251-3 Stub Leads, IPak

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