Ampahany :
IPB65R225C7ATMA2
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 11A TO-263-3
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
11A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
225 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
996pF @ 400V
Fandroahana herinaratra (Max) :
63W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO263-3
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB