SISH407DN-T1-GE3 Vidiny (USD) [245218pcs Stock]
- 1 pcs$0.15084
- Ampahany:
- SISH407DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CH 20V POWERPAK 1212.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Diodes - Zener - Iray, Ny kristianao - SCR, Transistors - IGBTs - Tafidina, Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, Diodes - Mpihazakazaka - Iray and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SISH407DN-T1-GE3 electronic components. SISH407DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH407DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH407DN-T1-GE3 Toetran'ny vokatra
Ampahany :
SISH407DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 20V POWERPAK 1212
Series :
TrenchFET®
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
15.4A (Ta), 25A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 15.3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
93.8nC @ 8V
Vgs (Max) :
±8V
Fampiasana masinina (Ciss) (Max) @ Vds :
2760pF @ 10V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.6W (Ta), 33W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® 1212-8SH
Famonosana / tranga :
PowerPAK® 1212-8SH
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