TK10J80E,S1E Vidiny (USD) [37612pcs Stock]
- 1 pcs$1.21125
- 25 pcs$1.20523
- Ampahany:
- TK10J80E,S1E
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET N-CH 800V TO-3PN.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Tratrao - TRIACs, Transistors - JFET, Transistor - FET, MOSFET - Arrays, Tratrao - SCR - Modules and Modules maotera mpamily ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TK10J80E,S1E electronic components. TK10J80E,S1E can be shipped within 24 hours after order. If you have any demands for TK10J80E,S1E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10J80E,S1E Toetran'ny vokatra
Ampahany :
TK10J80E,S1E
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 800V TO-3PN
Series :
π-MOSVIII
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
10A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
2000pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
250W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-3P(N)
Famonosana / tranga :
TO-3P-3, SC-65-3
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