[13117pcs Stock]
- Ampahany:
- IPD12N03LB G
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 30V 30A TO-252.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Diodes - Zener - Iray, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - Tafidina, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - IGBTs - Modules, Ny kristianao - SCR and Diodes - Mpihazakazaka - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPD12N03LB G electronic components. IPD12N03LB G can be shipped within 24 hours after order. If you have any demands for IPD12N03LB G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD12N03LB G Toetran'ny vokatra
Ampahany :
IPD12N03LB G
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 30A TO-252
Series :
OptiMOS™
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
30A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11.6 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 5V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1300pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
52W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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