[1405pcs Stock]
- Ampahany:
- SI2311DS-T1-E3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CH 8V 3A SOT23.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Transistor - Unjunction Programmable, Transistors - JFET, Diodes - Miova endrika ny habeny (varicaps, varact, Ny kristianao - SCR, Transistors - FETs, MOSFETs - Single, Modules maotera mpamily and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI2311DS-T1-E3 electronic components. SI2311DS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2311DS-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2311DS-T1-E3 Toetran'ny vokatra
Ampahany :
SI2311DS-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 8V 3A SOT23
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
8V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
45 mOhm @ 3.5A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (Max) :
±8V
Fampiasana masinina (Ciss) (Max) @ Vds :
970pF @ 4V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
710mW (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
SOT-23-3
Famonosana / tranga :
TO-236-3, SC-59, SOT-23-3
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