Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 20V 10A UDFN6B
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
10A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
15.3 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
29.9nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
2600pF @ 10V
Fandroahana herinaratra (Max) :
1W (Ta)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
6-UDFNB (2x2)
Famonosana / tranga :
6-WDFN Exposed Pad