BSB165N15NZ3GXUMA1 Vidiny (USD) [54861pcs Stock]
- 1 pcs$0.71272
- Ampahany:
- BSB165N15NZ3GXUMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 150V 9A WDSON-2.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - RF, Transistors - IGBTs - tokan-tena, Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - RF, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies BSB165N15NZ3GXUMA1 electronic components. BSB165N15NZ3GXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB165N15NZ3GXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB165N15NZ3GXUMA1 Toetran'ny vokatra
Ampahany :
BSB165N15NZ3GXUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 150V 9A WDSON-2
Series :
OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
9A (Ta), 45A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
8V, 10V
Rds On (Max) @ Id, Vgs :
16.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2800pF @ 75V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.8W (Ta), 78W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
MG-WDSON-2, CanPAK M™
Famonosana / tranga :
3-WDSON
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