SQ2315ES-T1_GE3 Vidiny (USD) [431769pcs Stock]
- 1 pcs$0.22939
- 10 pcs$0.19340
- 100 pcs$0.14519
- 500 pcs$0.10647
- 1,000 pcs$0.08227
- Ampahany:
- SQ2315ES-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CHAN 12V SOT23.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - RF, Transistor - FET, MOSFET - Arrays, Diodes - Zener - Iray, Transistorio - Bipolar (BJT) - Arrays, Transistors - IGBTs - tokan-tena and Ny thyristors - DIAC, SIDACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SQ2315ES-T1_GE3 electronic components. SQ2315ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2315ES-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ2315ES-T1_GE3 Toetran'ny vokatra
Ampahany :
SQ2315ES-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CHAN 12V SOT23
Series :
Automotive, AEC-Q101, TrenchFET®
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
50 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 4.5V
Vgs (Max) :
±8V
Fampiasana masinina (Ciss) (Max) @ Vds :
870pF @ 4V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
SOT-23-3 (TO-236)
Famonosana / tranga :
TO-236-3, SC-59, SOT-23-3
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