SQD50N05-11L_GE3 Vidiny (USD) [113470pcs Stock]
- 1 pcs$0.32596
- 2,000 pcs$0.30423
- Ampahany:
- SQD50N05-11L_GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 50V 50A TO252.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Tanjona manokana, Diodes - RF, Transistorio - Bipolar (BJT) - Arrays, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFET - RF, Tratrao - SCR - Modules and Diodes - Zener - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SQD50N05-11L_GE3 electronic components. SQD50N05-11L_GE3 can be shipped within 24 hours after order. If you have any demands for SQD50N05-11L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD50N05-11L_GE3 Toetran'ny vokatra
Ampahany :
SQD50N05-11L_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 50V 50A TO252
Series :
TrenchFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
50V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
50A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2106pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
75W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-252AA
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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