IPD65R660CFDBTMA1 Vidiny (USD) [133880pcs Stock]
- 1 pcs$0.27627
- 2,500 pcs$0.25344
- Ampahany:
- IPD65R660CFDBTMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 650V 6A TO252.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistors - IGBTs - tokan-tena, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - JFET, Diodes - RF, Transistor - Unjunction Programmable, Diodes - Zener - Iray and Transistors - IGBTs - Tafidina ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPD65R660CFDBTMA1 electronic components. IPD65R660CFDBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R660CFDBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R660CFDBTMA1 Toetran'ny vokatra
Ampahany :
IPD65R660CFDBTMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 6A TO252
Series :
CoolMOS™
Ampahany :
Not For New Designs
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
660 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
615pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
62.5W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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