GA10JT12-263 Vidiny (USD) [4640pcs Stock]
- 1 pcs$10.16943
- 10 pcs$9.24469
- 25 pcs$8.55122
- 100 pcs$7.47449
- 250 pcs$6.81498
- Ampahany:
- GA10JT12-263
- Manufacturer:
- GeneSiC Semiconductor
- Famaritana antsipirihany:
- TRANS SJT 1200V 25A.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Transistor - Unjunction Programmable, Ny thyristors - DIAC, SIDACs, Diode - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Tratrao - SCR - Modules, Diodes - Miova endrika ny habeny (varicaps, varact and Diodes - Zener - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in GeneSiC Semiconductor GA10JT12-263 electronic components. GA10JT12-263 can be shipped within 24 hours after order. If you have any demands for GA10JT12-263, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA10JT12-263 Toetran'ny vokatra
Ampahany :
GA10JT12-263
Manufacturer :
GeneSiC Semiconductor
Description :
TRANS SJT 1200V 25A
Series :
-
Ampahany :
Active
Type FET :
-
teknolojia :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
1200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
25A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
120 mOhm @ 10A
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
1403pF @ 800V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
170W (Tc)
Ny mari-pana :
175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
-
Famonosana / tranga :
-
Mety ho liana koa ianao
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