GeneSiC Semiconductor - GA10JT12-263

KEY Part #: K6399113

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Ampahany : GA10JT12-263

Manufacturer : GeneSiC Semiconductor

Description : TRANS SJT 1200V 25A

Series : -

Ampahany : Active

Type FET : -

teknolojia : SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss) : 1200V

Ankehitriny - Drain mitohy (Id) @ 25 ° C : 25A (Tc)

Fandefasana fiara (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : 120 mOhm @ 10A

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Fampiasana masinina (Ciss) (Max) @ Vds : 1403pF @ 800V

Fihetsika FET : -

Fandroahana herinaratra (Max) : 170W (Tc)

Ny mari-pana : 175°C (TJ)

Type Type : Surface Mount

Package Fitaovana mpamatsy : -

Famonosana / tranga : -

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