Infineon Technologies - BSZ160N10NS3GATMA1

KEY Part #: K6420036

BSZ160N10NS3GATMA1 Vidiny (USD) [153663pcs Stock]

  • 1 pcs$0.24071
  • 5,000 pcs$0.22080

Ampahany:
BSZ160N10NS3GATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 100V 40A TSDSON-8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - RF, Diode - Mpitaovana - Arrays, Tratrao - SCR - Modules, Diodes - Rectifiers Bridge, Diodes - Zener - Iray, Diodes - RF and Diodes - Miova endrika ny habeny (varicaps, varact ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies BSZ160N10NS3GATMA1 electronic components. BSZ160N10NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ160N10NS3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ160N10NS3GATMA1 Toetran'ny vokatra

Ampahany : BSZ160N10NS3GATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 40A TSDSON-8
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 8A (Ta), 40A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 1700pF @ 50V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 2.1W (Ta), 63W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TSDSON-8
Famonosana / tranga : 8-PowerTDFN

Mety ho liana koa ianao