Infineon Technologies - IPZ65R095C7XKSA1

KEY Part #: K6416757

IPZ65R095C7XKSA1 Vidiny (USD) [18330pcs Stock]

  • 1 pcs$2.50942
  • 240 pcs$2.49693

Ampahany:
IPZ65R095C7XKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 650V TO247-4.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Diode - Zener - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - Single, Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, Transistor - Unjunction Programmable and Transistors - IGBTs - tokan-tena ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPZ65R095C7XKSA1 Toetran'ny vokatra

Ampahany : IPZ65R095C7XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V TO247-4
Series : CoolMOS™ C7
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 24A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 95 mOhm @ 11.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 2140pF @ 400V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 128W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO247-4
Famonosana / tranga : TO-247-4

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