SI5922DU-T1-GE3 Vidiny (USD) [466812pcs Stock]
- 1 pcs$0.07963
- 3,000 pcs$0.07923
- Ampahany:
- SI5922DU-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2 N-CH 30V 6A POWERPAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Diode - Mpitaovana - Arrays, Transistor - Unjunction Programmable, Transistors - FETs, MOSFETs - Single, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFET - RF and Transistors - Bipolar (BJT) - Single, mialoha alik ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI5922DU-T1-GE3 electronic components. SI5922DU-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5922DU-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5922DU-T1-GE3 Toetran'ny vokatra
Ampahany :
SI5922DU-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 30V 6A POWERPAK
Series :
TrenchFET®
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
19.2 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7.1nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
765pF @ 15V
Hery - Max :
10.4W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® ChipFET™ Dual
Package Fitaovana mpamatsy :
PowerPAK® ChipFet Dual
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