Vishay Siliconix - SIHP33N60E-GE3

KEY Part #: K6403667

SIHP33N60E-GE3 Vidiny (USD) [13792pcs Stock]

  • 1 pcs$2.98795
  • 10 pcs$2.66623
  • 100 pcs$2.18631
  • 500 pcs$1.77038
  • 1,000 pcs$1.49309

Ampahany:
SIHP33N60E-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 600V 33A TO-220AB.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - FET, MOSFET - RF, Ny thyristors - DIAC, SIDACs, Diode - Mpitaovana - Arrays, Transistors - IGBTs - Modules, Transistors - IGBTs - tokan-tena and Diodes - Zener - Iray ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SIHP33N60E-GE3 electronic components. SIHP33N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHP33N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHP33N60E-GE3 Toetran'ny vokatra

Ampahany : SIHP33N60E-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 33A TO-220AB
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 33A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 3508pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 278W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-220AB
Famonosana / tranga : TO-220-3

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