SSM6N815R,LF Vidiny (USD) [622023pcs Stock]
- 1 pcs$0.05946
- Ampahany:
- SSM6N815R,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET 2N-CH 100V 2A 6TSOPF.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Diode - Zener - Arrays, Transistors - IGBTs - Tafidina, Transistor - Unjunction Programmable, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Diodes - Zener - Iray and Diodes - Miova endrika ny habeny (varicaps, varact ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage SSM6N815R,LF electronic components. SSM6N815R,LF can be shipped within 24 hours after order. If you have any demands for SSM6N815R,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N815R,LF Toetran'ny vokatra
Ampahany :
SSM6N815R,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET 2N-CH 100V 2A 6TSOPF
Series :
U-MOSVIII-H
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
2A (Ta)
Rds On (Max) @ Id, Vgs :
103 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
3.1nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
290pF @ 15V
Hery - Max :
1.8W (Ta)
Ny mari-pana :
150°C
Type Type :
Surface Mount
Famonosana / tranga :
6-SMD, Flat Leads
Package Fitaovana mpamatsy :
6-TSOP-F
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