RN1902FE,LF(CT Vidiny (USD) [1436579pcs Stock]
- 1 pcs$0.02588
- 4,000 pcs$0.02575
- Ampahany:
- RN1902FE,LF(CT
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- TRANS 2NPN PREBIAS 0.1W ES6.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Diodes - Miova endrika ny habeny (varicaps, varact, Transistor - Tanjona manokana, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - Single, Tratrao - TRIACs, Transistors - Bipolar (BJT) - Single, mialoha alik and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage RN1902FE,LF(CT electronic components. RN1902FE,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1902FE,LF(CT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1902FE,LF(CT Toetran'ny vokatra
Ampahany :
RN1902FE,LF(CT
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2NPN PREBIAS 0.1W ES6
Series :
-
Ampahany :
Active
Type Transistor :
2 NPN - Pre-Biased (Dual)
Ankehitriny - Collector (Ic) (Max) :
100mA
Volonta - Famoronan'ny mpanangom-bokatra :
50V
Resistor - Base (R1) :
10 kOhms
Resistor - Emitter Base (R2) :
1 kOhms
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Ankehitriny - Collector Cutoff (Max) :
100nA (ICBO)
Frequency - Tetezamita :
250MHz
Hery - Max :
100mW
Type Type :
Surface Mount
Famonosana / tranga :
SOT-563, SOT-666
Package Fitaovana mpamatsy :
ES6
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