Toshiba Semiconductor and Storage - RN2906FE(TE85L,F)

KEY Part #: K6530116

[1939pcs Stock]


    Ampahany:
    RN2906FE(TE85L,F)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Famaritana antsipirihany:
    TRANS 2PNP PREBIAS 0.1W ES6.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Zener - Iray, Diodes - Rectifiers Bridge, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - Unjunction Programmable, Transistors - JFET, Ny thyristors - DIAC, SIDACs, Diode - Zener - Arrays and Modules maotera mpamily ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Toshiba Semiconductor and Storage RN2906FE(TE85L,F) electronic components. RN2906FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2906FE(TE85L,F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN2906FE(TE85L,F) Toetran'ny vokatra

    Ampahany : RN2906FE(TE85L,F)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : TRANS 2PNP PREBIAS 0.1W ES6
    Series : -
    Ampahany : Active
    Type Transistor : 2 PNP - Pre-Biased (Dual)
    Ankehitriny - Collector (Ic) (Max) : 100mA
    Volonta - Famoronan'ny mpanangom-bokatra : 50V
    Resistor - Base (R1) : 4.7 kOhms
    Resistor - Emitter Base (R2) : 47 kOhms
    DC ankehitriny Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Ankehitriny - Collector Cutoff (Max) : 100nA (ICBO)
    Frequency - Tetezamita : 200MHz
    Hery - Max : 100mW
    Type Type : Surface Mount
    Famonosana / tranga : SOT-563, SOT-666
    Package Fitaovana mpamatsy : ES6

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