IPP041N12N3GXKSA1 Vidiny (USD) [13572pcs Stock]
- 1 pcs$3.03642
- Ampahany:
- IPP041N12N3GXKSA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 120V 120A TO220-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - IGBTs - Tafidina, Diode - Mpitaovana - Arrays and Diodes - Rectifiers Bridge ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPP041N12N3GXKSA1 electronic components. IPP041N12N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP041N12N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP041N12N3GXKSA1 Toetran'ny vokatra
Ampahany :
IPP041N12N3GXKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 120V 120A TO220-3
Series :
OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
120V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
120A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs :
211nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
13800pF @ 60V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
300W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
PG-TO220-3
Famonosana / tranga :
TO-220-3
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