Toshiba Semiconductor and Storage - RN2911,LF

KEY Part #: K6529399

RN2911,LF Vidiny (USD) [1843875pcs Stock]

  • 1 pcs$0.02016
  • 3,000 pcs$0.02006

Ampahany:
RN2911,LF
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
TRANS 2PNP PREBIAS 0.2W US6.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Transistors - IGBTs - Tafidina, Diodes - Mpihazakazaka - Iray, Transistorio - Bipolar (BJT) - Arrays, Transistor - FET, MOSFET - Arrays, Diode - Zener - Arrays, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Single, mialoha alik ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage RN2911,LF electronic components. RN2911,LF can be shipped within 24 hours after order. If you have any demands for RN2911,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2911,LF Toetran'ny vokatra

Ampahany : RN2911,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS 2PNP PREBIAS 0.2W US6
Series : -
Ampahany : Active
Type Transistor : 2 PNP - Pre-Biased (Dual)
Ankehitriny - Collector (Ic) (Max) : 100mA
Volonta - Famoronan'ny mpanangom-bokatra : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Ankehitriny - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Tetezamita : 200MHz
Hery - Max : 200mW
Type Type : Surface Mount
Famonosana / tranga : 6-TSSOP, SC-88, SOT-363
Package Fitaovana mpamatsy : US6

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