Infineon Technologies - IPB80N03S4L03ATMA1

KEY Part #: K6419739

IPB80N03S4L03ATMA1 Vidiny (USD) [128552pcs Stock]

  • 1 pcs$0.28772
  • 1,000 pcs$0.26397

Ampahany:
IPB80N03S4L03ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 30V 80A TO263-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Mpihazakazaka - Iray, Transistors - Bipolar (BJT) - Single, Transistor - Tanjona manokana and Diode - Zener - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies IPB80N03S4L03ATMA1 electronic components. IPB80N03S4L03ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80N03S4L03ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80N03S4L03ATMA1 Toetran'ny vokatra

Ampahany : IPB80N03S4L03ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 30V 80A TO263-3
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.3 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs : 75nC @ 10V
Vgs (Max) : ±16V
Fampiasana masinina (Ciss) (Max) @ Vds : 5100pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 94W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO263-3-2
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Mety ho liana koa ianao