SQ2337ES-T1_GE3 Vidiny (USD) [344842pcs Stock]
- 1 pcs$0.10726
- 3,000 pcs$0.09710
- Ampahany:
- SQ2337ES-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CHAN 80V SOT23.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - TRIACs, Transistor - Unjunction Programmable, Diodes - Mpihazakazaka - Iray, Modules maotera mpamily, Transistors - Bipolar (BJT) - Single, Transistor - Tanjona manokana, Diodes - RF and Transistors - Bipolar (BJT) - Single, mialoha alik ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SQ2337ES-T1_GE3 electronic components. SQ2337ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2337ES-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ2337ES-T1_GE3 Toetran'ny vokatra
Ampahany :
SQ2337ES-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CHAN 80V SOT23
Series :
Automotive, AEC-Q101, TrenchFET®
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
2.2A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
290 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
620pF @ 30V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
SOT-23-3 (TO-236)
Famonosana / tranga :
TO-236-3, SC-59, SOT-23-3
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