IXFT80N10Q Vidiny (USD) [1120pcs Stock]
- 30 pcs$6.33815
- Ampahany:
- IXFT80N10Q
- Manufacturer:
- IXYS
- Famaritana antsipirihany:
- MOSFET N-CH 100V 80A TO-268.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistor - FET, MOSFET - Arrays, Diodes - Rectifiers Bridge, Ny kristianao - SCR, Transistors - IGBTs - Tafidina, Diodes - RF, Diode - Zener - Arrays and Transistors - FET, MOSFET - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in IXYS IXFT80N10Q electronic components. IXFT80N10Q can be shipped within 24 hours after order. If you have any demands for IXFT80N10Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT80N10Q Toetran'ny vokatra
Ampahany :
IXFT80N10Q
Manufacturer :
IXYS
Description :
MOSFET N-CH 100V 80A TO-268
Series :
HiPerFET™
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
15 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
4500pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
360W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-268
Famonosana / tranga :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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